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Silicon Carbide (SiC) Materials & Device Workshop

December 13 @ 7:45 am - December 14 @ 12:00 am

Co-sponsored by: preetpaul.devgan@us.af.mil

This workshop is 1.5 days and focuses on Silicon Carbide (SiC) Materials and Devices. The event will be at Wright Brothers Institute Tec^Edge facility on 13-14 Dec 2018 (Thurs 0745-1700, Fri 0800-1200) with technical talks all day the first day, followed by a keynote presentation and poster session the second day. The presentations are organized into 4 main sessions: Materials and Processing, Electronics, MEMS/NEMS, and Photonics/Quantum Sciences. Presenters are from across academia, government and industry – with emphasis on defense applications.  Additional details can be found at the workshop website:  https://sites.google.com/case.edu/sic2018. This is the second year of this event, with the initial one being a successful 1-day event at the CWRU campus in Cleveland.

Seating is limited to 60 people and pre-registration is encouraged.  Lunch is sponsored by the IEEE Dayton Photonics Society and will be free for IEEE members.  Registration for non-members is $6.  

  

Agenda:

Day 1 – Thurday – 13 Dec 2018

0745-0800 Welcome, Introduction & Workshop Logistics

0800-1000 Session 1 – Materials and Processing

1020-1205 Session 2 – Electronics

1215-1315 Lunch

1315-1500 Session 3 – M/NEMS

1510-1655 Session 4- Photonics/Quantum Sciences

Day 2 – Friday -14 Dec 2018

0800-0830 Keynote Presentation

0830-1000 Poster Session

 

Location:
Bldg: Wright Brothers Institute – Tec^Edge
5000 Springfield St
Dayton, OH , Ohio
45431

Details

Start:
December 13 @ 7:45 am
End:
December 14 @ 12:00 am
Website:
http://events.vtools.ieee.org/m/183019