IEEE Nanotechnology Council
Advancing Nanotech for Humanity
IEEE

  • Latest News


  • News Categories


  • Recent Comments


  • Archives


  • Upcoming Events

    Mon 23

    IEEE-NANO 2018

    July 23 - July 26
    Cork Ireland
    Mon 23

    IEEE NTC 2018 AdCom

    July 23 @ 8:00 am - 5:00 pm IST
    Cork Ireland
    Aug 13

    3M-NANO 2018

    August 13 @ 8:00 am - August 17 @ 5:00 pm CST
    Hangzhou China
    Oct 14

    IEEE NMDC 2018

    October 14 @ 8:00 am - October 17 @ 5:00 pm PDT
    OR United States

NANO NEWS

Nanotechnology      Nano News

 

_____________________________________________________________________________

Negative Capacitance FET (NCFET) can be viewed as a FET with built-in voltage amplification. The first ALD ferroelectric HfZrO2 based negative-capacitance FinFET with gate length as small as 30 nm was reported in IEEE International Electron Devices Meeting (IEDM 2015) in Washington, DC USA. Small-signal voltage was amplified by 1.6X maximum at the internal gate with the sub-threshold swing improved from 87 to 55mV/decade. ION increased by >25% for the IOFF.

NC FINFET

To read more: IEDM15-621 Paper #22.6.2

Sub-60mV-Swing Negative-Capacitance FinFET without Hysteresis”

Kai-Shin Li(1), Pin-Guang Chen(2, 3), Tung-Yan Lai1, Chang-Hsien Lin(1), Cheng-Chih Cheng(3), Chun-Chi Chen(1), Yun-Jie Wei(1), Yun-Fang Hou(1), Ming-Han Liao(2), Min-Hung Lee(3), Min-Cheng Chen(1), Jia-Min Sheih(1), Wen-Kuan Yeh(1), Fu-Liang Yang(4), Sayeef Salahuddin(5), Chenming Hu(5)

(1) National Nano Device Laboratories, National Applied Research Laboratories, Hsinchu, Taiwan. (2) Department of Mechanical Engineering, National Taiwan University, Taipei, Taiwan. (3) Institute of Elecro-Optical Science and Technology, National Taiwan Normal University, Taipei, Taiwan. (4) Research Center for Applied Sci., Academia Sinica, Taipei,Taiwan. (5) Dept. of Electrical Eng. and Computer Science, University of California, Berkeley, USA; Tel: +886-3-572-6100 ext. 7706, Fax: +886-3-572-6109, Email: ksli@narlabs.org.tw

(Posted by Yonhua Tzeng)

By combining standard through-the-lens viewing with a technique called scatterfield imaging, the NIST team accurately measured patterned features on a silicon wafer that were 30 times smaller than the wavelength of light (450 nanometers) used to examine them. They reported that measurements of the etched lines—as thin as 16 nanometers wide—on the SEMATECH-fabricated wafer were accurate to one nanometer. 

 Nanophotonics 0 NIST

credit: NIST/Barnes

(Recommended by Ed Perkins, posted by Yonhua Tzeng)

 To  read more:

  1. http://www.nist.gov/pml/div683/measuring_nanoscale_features_fractions_light_12-2-2015.cfm 
  2. J. Qin, R.M. Silver, B.M. Barnes, H. Zhou, R.G. Dixson, and M.A.Henn,”Deep-subwavelength Nanometric Image Reconstruction using Fourier Domain Optical Normalization.” Light: Science & Applications. Article preview Nov. 5, 2015; e16038. To download: http://221.8.12.233/cms/accessory/files/AAP-lsa201638.pdf

 

Read more nano news @ IEEE NTC NANO BLOG

Comments are closed.