Co-sponsored by: Montgomery College IEEE Student Chapter

State-of-the art MOSFETs employ various enhancements to boost ON current. Most efforts focus on improving the channel mobility. However, ON current is determined by the total resistance, not the channel resistance. Alarmingly, 50% or more of the total resistance is not channel resistance in advanced MOSFET, and percentage is getting larger for more advanced nodes. Exactly how much turns out to be a difficult question to answer. This is because measuring either channel mobility or series resistance reliably is challenging. Already, there is good chance that the effort of improving the channel has reached diminishing return. Yet resources continue to pour into this direction by both industry and academics. Clearly, there is an acute need to find solution to this measurement problem. In this talk, some of our efforts at NIST is described.

Speaker(s): Dr. (Charles) Kin P. Cheung,

Agenda:

6:00 pm Light supper and networking opportunity

7:00 pm Technical talk

Location:
Room: SW 301
Bldg: Science Center
Montgomery College (Rockville campus)
51 Mannakee Street
Rockville, Maryland
20850