IEEE Orange County Section

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2011 IEEE Orange County Section Awards Nomination Package

The IEEE Orange County Section will give a total of two awards this year recognizing the outstanding contributions and accomplishments of IEEE members. These awards
winners will also be nominated for Area level or further Region level awards. This
package provides an overview of these Orange County Section awards, along with
nomination form. The Orange County Section awards of Orange County Section are as
follows:

1. Outstanding Engineer Award:
Award is designed to recognize IEEE members of Orange County Section who
through their technical abilities have made outstanding contributions to their
profession. It recognizes the development of new technical concepts, significant
patents, development of new devices, development of applications, new designs,
and significant cost reductions using known techniques.

2. Outstanding Leadership and Professional Service Award:
Award is designed to recognize IEEE members of Orange County Section who
through their professional and technical abilities have made outstanding and
noteworthy contributions to the Institute, their communities, fellow professionals
and fellow man. The award is not designed to recognize a single achievement,
but rather collective contributions complemented by singular works
exemplifying the objectives and attributes of IEEE.

Awards Procedure Guidelines:

Process Overview
The nominations for the awards are submitted directly to Awards Chair. The Awards
Chair compiles all the submittals and forward to the Awards Committee to review the
nominations and to select the winners.

Awards Committee
The awards committee consists of distinguished scholars and IEEE Fellows

Awards Schedule
Call for Nominations: March 28
Nomination Submittal Deadline: April 23
Awards Recipients Notified April 30
Winners Nominated for Area Awards April 30

Awards Presentation

The Orange County Section Awards are given to the winners at an Awards ceremony
during an Annual Orange County Section Luncheon/Dinner. These Orange County
Section Awards can also be given at our ExCom meetings in specific cases with special
prior arrangements.

Important Notes on Nominations
Nomination Form is to be completed by the nominator (self nominations are also
encouraged) and submitted directly to the Awards Chair. Additional long resume or
informational document may be submitted at the discretion of the nominator.
Supporting information on the nominee is a key ingredient in a successful nomination
process. While a fully completed Award nomination form is the base requirement to
submit your nominee, the inclusion of summary information (along with the form)
allows the section to provide greater depth and detail regarding the nature of their
nominee’s achievements and contributions. In the nomination form you will find
specific mention of supporting items that can be included in your nomination submittal.
Contact Information of Awards and Advancement Chairs:

For any questions regarding awards, please contact the Awards Chair or the Orange
County Section Awards Coordinator:

Orange County Section Awards Chair
Mr.Russel Hunter
e-Mail: russellk.hunter.at.gmail.com
Orange County Section Awards Coordinator

Dr. John Collins
e-Mail: collins.at.ieee.org

NOMINATION FORM for IEEE Orange County Section Awards
[x] Outstanding Engineer Award
[ ] Outstanding Leadership and Professional Service Award

Name: Dr. Charles E. Wessel
Address: 2222 W. Orange Avenue, Mesa, CA- 92612
Phone: 9491234567 e-Mail: chuck@ieee.org
Occupation: Engineer
Title/Position: Chief Technology Officer, Ren Technologies, Ana, CA
IEEE Grade: Senior Date of Grade: 1983
Company: Engineering and Technology
Type of Business: Services for Sustainable Energy
Number of employees:7
Proposed Citation: Contributions to Compound Semiconductor Technology and
Devices
Supporting information to be attached, as appropriate and applicable:
(a) Engineering Career (Brief Summary),
(b) Education,
(c) Research/inventions,
(d) Contributions to engineering literature,
(e) Contributions to IEEE activities,
(f) Contributions to the community

Example of Nominator’s Recommendation Letter

Dr. Charles (Chuck) Weitzel has made significant technical contributions in the areas of
RF and power switching device technologies over his career with a primary focus on compound semiconductor devices fabricated using GaAs, SiC or GaN. For most of his
career, Chuck has acted as a project leader and/or manager and has always made real,
significant, individual contributions to the technologies he worked on. He has been
issued 42 US patents and published over 70 technical publications.
Chuck started work in the GaAs area in the late 1970’s, when he joined Motorola.
He made lasting contributions through that work, including building some of the first
GaAs device ever made at Motorola. Later in his career (2001-2008), Chuck was
responsible for all RF GaAs device development: InGaP HBT’s and E-mode FET’s for
cell phone power amplifiers, and PHEMT’s for RF switches and basestation power
amplifiers. Chuck’s work in the GaAs area is widely published and patented, and
includes:

–Work that showed that GaAs should never be rinsed in high purity water, due to
accelerated Galvanic etching around contacts.

–Project leader for development of Motorola’s first GaAs product, the
MRFG966, which is still on the market today.

–Developed a method for using multiple layers of metals and dielectrics to build on-wafer passive components on a semi-insulating substrate, a technique still widely used in the GaAs industry today. This technique was used in Motorola’s first GaAs MMIC technology, which included resistors, capacitors, and inductors.

–Development of the ohmic contact metallization scheme that has been used by
Motorola/Freescale for over 15 years.

— Inventor on the first patent (US5119149) issued describing use of a field plate to
enhance the RF gain of field-effect transistors. Field plates are now widely used in a
wide variety of FET technologies, including LDMOS power FET’s.

–Further development of the field plate into a self-aligned process that resulted in
greatly improved gain for GaAs PHEMT’s at 5.8GHz.

–In addition to the field plate, patent for and use of a step-gate structure to increase the
breakdown voltage of RF GaAs PHEMTS to a point where they could operate at 26V
drain bias and achieve power density of 1.8W/mm.

–Improvement of the PHEMT epi structure so that the device did not show degraded
linearity at -40C, by placing the Si planar doping layer within a thin layer of GaAs in the
AlGaAs barrier.

–Significant contributions to technology benchmarking through appropriate RF
performance comparisons among GaAs FET’s, InGaP HBT’s, SiGe HBT’s, Si CMOS, Si
LDMOS, SiC MESFET’s and GaN HFET’s, and working with the ITRS to develop
technology roadmaps (RF and Analog/Mixed- Signal Technologies for Wireless
Communications) that included these technologies.

Chuck’s lasting impact on GaAs microwave device technology over the past 30 years is
most evident from the fact that many of the technologies he developed are still in use
today, from the MRFG966 to on-wafer passives for MMIC’s to wafer cleaning and
ohmic contact processes, to device (field plate, step gate) and epi structures.
Chuck started working in wide bandgap semiconductors in the early 1990’s by starting
Motorola’s first SiC program, which included both RF and power switching devices. A
number of contributions were made from that program:

–Started the first SiC MESFET work at Motorola, jointly with Cree Research via a
government contract. This work lasted approximately 6 years, and resulted in SiC
MESFET’s with 1.8GHz power density of 2.8W/mm. SiC RF power devices today
achieve about the same power density that was demonstrated during this project in
1994.

–Started SiC-based power switching device work at Motorola (diodes and
MOSFET’s), including the use of an accumulation mode MOSFET, rather than the industry-standard inversion mode device that suffered from lower mobility.

–Extended wide bandgap power device work into GaN materials through fundamental
patent describing how a RESURF layer could be used under the channel layer in a GaN
HFET.

–Started Freescale’s first intensive effort for RF GaN devices in 2005.
This development project at Freescale achieved in 2 years RF performance that matched that from companies who had been working in GaN technology for many years. These devices are now being targeted for high frequency, high linearity base-station applications.

–Extensively published technology benchmarking for RF and power switching wide
bandgap devices, including both SiC and GaN technologies.
Chuck’s lasting impact in wide bandgap technology is also clear, including a record for
device performance that is still relevant 15 years later, and several novel device
structures and their patents.