Santa Clara Valley-San Francisco Chapter of Electron Devices Society

IEEE
Past Events

July 9th Seminar “Emerging Challenge of Self-heating in Modern FINFET, ETSOI, and Gate-All-Around III-V Transistors”

SCV Electron Devices Society July 9th Seminar “Too Hot to Handle: The Emerging Challenge of Self-heating in Modern FINFET, ETSOI, and Gate-All-Around III-V Transistors”

Speaker: Professor Muhammad A. Alam, Purdue University, West Lafayette, IN 

 

Abstract:

By early 2000s, many researchers would begin their talks with an iconic cartoon that superimposed the images of rocket nozzles and the Sun onto a plot of the increasing power dissipation of an IC. The message was difficult to ignore: the voltage-scaling kept power-dissipation at bay. Fast forward to 2015 – the tyranny of short channel effects at the sub 32 nm nodes has led to the development of FIGFET and ETSOI technologies, with gate-all-around III-V transistors in the horizon. The short channel effects are controlled, but at the expense of additional self-heating of the system.  Stacks of materials (several of which are poor thermal conductors) now surround the very hot channel to make the bad situation worse. In this talk, I will tell you the story of our mapping the self-heating in 3D in surround gate transistors and how self-heating redefines and conflates the traditional notions of performance and reliability of ultrathin transistors and frontend and backend issues of a modern IC.

References of many of the topics discussed can be found at http://nanohub.org/resources/16560 and at http://cobweb.ecn.purdue.edu/~alam/

Biography:

Professor Alam teaches Electrical Engineering at Purdue University, where his research focuses on  classical and novel semiconductor devices. From 1995 to 2001, he was with Bell Laboratories, Murray Hill, NJ, as a Member of Technical Staff in the Silicon ULSI Research Department. From 2001 to 2003, he was a Distinguished Member of Technical Staff at Agere Systems, Murray Hill, NJ. He joined Purdue University in 2004, where he is now the Jai N. Gupta professor of Electrical Engineering. Dr. Alam has made fundamental contributions to reliability physics and the theory of carrier transport in spatially and temporally random systems. He has published over 180 papers in international journals and has presented numerous invited and contributed talks at international conferences. He is a fellow of IEEE, American Physical Society, and American Association for the Advancement of Science, and recipient of 2006 IEEE Kiyo Tomiyasu Medal for contributions to device technology for communication systems.

——————————————————————
More information at the IEEE Santa Clara Valley EDS Chapter Home Page
 http://sites.ieee.org/scv-eds/

Link to previous web page: http://www.ewh.ieee.org/r6/scv/eds/

Subscribe or Invite your friends to sign up for our mailing list and get to hear about exciting electron-device relevant talks. We promise no spam and try to minimize email. You can unsubscribe easily.
http://sites.ieee.org/scv-eds/subscribe/