SF Bay Area Nanotechnology Council

IEEE

TITLE: Transforming Nanodevices to Nanosystems

SPEAKER: Max M. Shulaker, Stanford University

Dr.Max M. Shulaker

Tuesday, June 21st, 2016  11:30 AM – 1:00  pm

Texas Instruments (TI) Auditorium E-1
2900 Semiconductor Drive
Santa Clara, CA
map

Admission FREE ($5 donation requested). Please register here.

ABSTRACT:

The computing demands of future data-intensive applications far exceed the capabilities of today’s electronics, and cannot be met by isolated improvements in transistor technologies or integrated circuit (IC) architectures alone. Transformative nanosystems, which leverage the unique properties of emerging nanotechnologies to create new IC architectures, are required to deliver unprecedented performance and energy efficiency. However, emerging nanomaterials and nanodevices suffer from significant imperfections and variations. Thus, realizing working circuits, let alone transformative nanosystems, has been infeasible.

As a case-study for realizing nanosystems, I will present my work on carbon nanotube field-effect transistors (CNFETs), a leading candidate for energy-efficient and high-performance digital systems. Unfortunately, substantial imperfections and variations inherent to carbon nanotubes (CNTs), combined with low current densities, restricted demonstrations to stand-alone transistors or logic gates, with severely limited performance, yield, and scalability. I will describe techniques to overcome these major challenges through a combination of new CNT process techniques and CNFET circuit design solutions. This imperfection-immune paradigm transforms CNTs from solely a scientifically-interesting material into working nanosystems such as the first microprocessor [Nature 2013] and the first digital sub-systems [ISSCC 2013, JSSC 2014, ACS Nano 2014] built entirely using CNFETs. These are the first system-level demonstrations among promising emerging nanotechnologies for high-performance and highly energy-efficient digital systems. This approach also enables high-performance CNFETs with the highest current-drive to-date (which are, for the first time, competitive with comparably-sized silicon-based transistors from commercial foundries [IEDM 2014]). All of the fabrication and design techniques are VLSI-compatible, and can be applied to arbitrary technology nodes; to illustrate, I will describe recent results from a 14 nm-node CNFET [IEDM 2015].

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Beyond specific CNT technologies, I will also present my work on building new architectures to achieve high degrees of energy efficiency for emerging data-intensive applications. Such new architectures are naturally enabled by a range of beyond-silicon emerging nanotechnologies (including CNTs). I will demonstrate the first monolithically-integrated three-dimensional (3D) nanosystem architectures [VLSI Tech. 2014, IEDM 2014] with vertically-integrated layers of logic, memory, and sensing circuits. These include the largest nanosystem yet fabricated using beyond-silicon emerging nanotechnologies, with over 2 million CNFETs and over 1 million Resistive Random Access Memory (RRAM) cells, all integrated vertically over a conventional silicon substrate with over 1 million silicon transistors (all fabricated at the Stanford Nanofabrication Facility). With dense and fine-grained connectivity between sensing, storage and computation, such nanosystems can capture terabytes of data from the outside world every second, and produce “processed information” by performing in-situ classification of the sensor data using on-chip accelerators designed using CNFET logic.

I will conclude by giving my vision for how the ubiquitous computing technology that is critical for meeting society’s challenges in the 21st century can be realized by harnessing the capabilities of multiple nanomaterials and nanodevices in complex nanosystems.

SPEAKER BIOGRAPHY:

Max Shulaker will be joining MIT in Electrical Engineering and Computer Science as a faculty member, having finished his PhD in Electrical Engineering at Stanford University under the supervision of Professor Subhasish Mitra and co-advised by Professor Philip Wong. He received his B.S. from Stanford University in Electrical Engineering. Max’s current research interests are in the broad area of nanosystems. His research results include the demonstration of the first carbon nanotube computer (highlighted on the cover of Nature, Sept. 2013), the first digital sub-systems built entirely using carbon nanotube FETs (awarded the ISSCC Jack Raper Award for Outstanding Technology-Directions Paper, 2013), the first monolithically-integrated 3D integrated circuits combining arbitrary vertical stacking of logic and memory (IEDM 2014), the highest-performance CNFETs to-date (IEDM 2014), and the first highly-scaled CNFETs fabricated in a VLSI-compatible manner (IEDM 2015). He was a Fannie and John Hertz Fellow and a Stanford Graduate Fellow.

AGENDA:

  • 11:30 am – Registration & light lunch (pizza & drinks)
  • Noon – Presentation & Questions/Answers
  • 1:00 pm – Adjourn
COST: FREE, but a $5 donation is requested to help cover the cost of lunch

Please register here.

Also, visit our Meetup Group.


IEEE SFBA Nanotechnology Council Chapter 12th Annual Full Day Symposium

“Nanotechnology in Biosystems, Medicine and Health”

May 17, 2016 8:30AM – 5:45 PM

Texas Instruments Conference Center, Bldg. E-1, 2900 Semiconductor Drive, Santa Clara, CA map

Register here

Nanomedicine in the 21st Century

Prof. Folarin Erogbogbo, Biomedical Engineering, San Jose State University, and Conference Chair

Building micro/nano interfaces to cells and organisms

Prof. Michel M. Maharbiz, Electrical Engineering, University of California, Berkeley

Nanoscale devices as smart biomaterials for surface-cell interactions

Prof. Nicolas A. Melosh, Materials Science, Stanford University

Nanoweave – Proprietary Scaffold for Tissue Engineering

Mr. Greg King, CEO, Fibralign

Cancer Nanotechnology : Opportunities and Challenges

Prof. Demir Akin, Deputy Director, Center for Cancer Nanotechnology Excellence, Stanford University

Enabling Safe, Effective and Non-Viral Genetic Nanomedicine

Mr. Andre Watson, Founder, Ligandal

Nanodiamonds for sentinel lymph node mapping

Dr. Ambika Bumb, CEO and Founder, Bikanta

Nanodiamonds for Neuroimaging

Prof. Abraham Wolcott, Physical Chemistry, San Jose State University

Theranostic nanoparticles

Prof. Zhen Cheng, Director of the Cancer Molecular Imaging Lab, Stanford School of Medicine

Also: Student Poster Sessions and Networking

Register here

Sponsors

        http://www.7men.nl/wp-content/uploads/2015/12/IBM-banner.jpg               emblogo


TITLE: Materials Studies of New High Efficiency Perovskite Solar Absorbers

SPEAKER: Dr. Mike Toney, SLAC National Accelerator Laboratory & Stanford UniversityDr.Mike Toney

Tuesday, April 19th, 2016  11:30 AM – 1:00  pm
Texas Instruments (TI) Auditorium E-1
2900 Semiconductor Drive
Santa Clara, CA
map

Admission FREE ($5 donation requested). Please register here.

Cosponsored by IEEE Santa Clara Valley Photovoltaic Section and IEEE Santa Clara Valley Photonics Society

ABSTRACT:

Organic-inorganic halide perovskite films (e.g., methylammonium lead iodide  xrd3 or CH3NH3PbI3) were first employed as light absorbing layers in photovoltaic (PV) devices in 2009, and produced relatively modest power conversion efficiencies (PCEs) of 3.8%.Since then, the development of perovskite solar cells has been meteoric, with PCEs increasing from 3.8% to over 21% in just over five years.

The combination of high extinction coefficients, long charge carrier diffusion lengths and compatibility with low cost, solution-based fabrication processes gives these materials enormous commercial potential.

A significant appeal of CH3NH3PbI3 is their facile synthesis using solution processes. Typically a low temperature anneal (about 100 °C) is involved in film synthesis with subsequent cooling through the cubic-to-tetragonal phase transition near 65 °C. Since the transition temperature is within the range expected in real world device applications, it is therefore important to understand the structural behavior at this transition and its impact on the device performance.

In order to better understand this phase transition in CH3NH3PbI3 thin films, we have developed the capability for operando synchrotron X-ray diffraction by designing a sample stage for simultaneous, temperature dependent measurement of J-V curves and diffraction. This has allowed us to obtain X-ray diffraction data during the operation of CH3NH3PbI3 devices.

 Here I will present detailed structural characterization of the perovskite crystal structure with increasing temperature, including the tetragonal lattice distortion, octahedral rotations associated with the room temperature tetragonal phase, and thermal (disorder) parameters. The impact of these structural changes on the device J-V characteristics will be described and we comment on potential implications for material and device properties.

SPEAKER BIOGRAPHY:

Michael Toney is head of the Materials Sciences Division and a distinguished staff scientist at the Stanford Synchrotron Radiation Lightsource (SSRL), part of the SLAC National Accelerator Laboratory. He is a pioneer in the use of X-ray diffraction and small angle scattering for the determination of molecular and mesoscale structure of organic and polymeric thin films and for the determination of atomic structure of electrode-electrolyte interfaces. Toney received his BS from Caltech in 1979 and his PhD from the University of Washington in 1983, both in physics. He spend one year as a postdoc at the Risoe National Lab (now DTU) in Denmark, where he participated in some of the first surface X-ray diffraction experiments. He then began working at IBM Almaden Research in materials sciences. He left IBM in 2003 to join SLAC National Accelerator Laboratory and Stanford, where he starting programs in sustainable energy materials.

AGENDA:

  • 11:30 am – Registration & light lunch (pizza & drinks)
  • Noon – Presentation & Questions/Answers
  • 1:00 pm – Adjourn
COST: FREE, but a $5 donation is requested to help cover the cost of lunch

Please register here.

Also, visit our Meetup Group.


Tuesday, March 15th, 2016 Mamin enhanced 11:30 AM – 1:00  pm
Texas Instruments (TI) Auditorium E-1
2900 Semiconductor Drive
Santa Clara, CA
map

TITLE: Nanoscale Magnetic Resonance Imaging- the Quest for a Molecular Structure Microscope
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SPEAKER: Dr. John Mamin, IBM

Cosponsored by the Santa Clara Valley Chapter of the IEEE Engineering in Medicine and Biology Society
ABSTRACT:
Magnetic resonance imaging (MRI) has had a huge impact in the biomedical field, with its ability to image the body non-destructively in three dimensions. A number of groups around the world are working to develop nanoMRI, applying the principles of MRI to perform three dimensional microscopy, with the ultimate goal of imaging individual biological molecules such as protein. Because nuclear magnetism is such a weak effect, any such technique will require a magnetic sensor that is both extremely sensitive and nanometer scale. In the past our group has used ultrasensitive force detection to sense the minute forces (~10-18 N) between a magnetic tip and small ensembles of hydrogen nuclei. More recently, we have explored the use of nitrogen vacancy centers in diamond as quantum magnetometers for detecting nuclear magnetic resonance. I will describe both recent progress and the considerable challenges that lay ahead.

 

Mamin abstract enhanced

 

SPEAKER BIOGRAPHY:
John Mamin graduated from Stanford with a B.S. in physics and did his Ph.D. and postdoc in physics at UC Berkeley, working in superconductivity and the then emerging field of scanning tunneling microscopy. He has been a Research Staff Member at IBM ever since, working in areas ranging from magnetic force microscopy to probe- based data storage to pushing the limits of force detection. He is a Fellow of the American Physical Society, and co-recipient of the 2009 Cozzarelli and the 2011 Gunther Laukien Prize for work in nanoscale magnetic resonance.

AGENDA:

  • 11:30 am – Registration & light lunch (pizza & drinks)
  • Noon – Presentation & Questions/Answers
  • 1:00 pm – Adjourn
COST: FREE, but a $5 donation is requested to help cover the cost of lunch

Please register here.

Also, visit our Meetup Group.



Tom Albrecht PSTuesday, February 16, 2016 

11:30 AM – 1:00  pm
Texas Instruments (TI) Auditorium E-1
2900 Semiconductor Drive
Santa Clara, CA
map

Admission FREE. Please register here.

TITLE: Nanoscale Chemical Imaging with Photo-induced Force Microscopy
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SPEAKER: Dr. Tom Albrecht, Molecular Vista, Inc.

ABSTRACT:
Infrared Photo-induced Force Microscopy (IR PiFM) is based on an atomic force microscopy (AFM) platform that is coupled to a widely tunable mid-IR laser.  PiFM measures the dipole induced at or near the surface of a sample by an excitation light source by detecting the dipole-dipole force that exists between the induced dipole in the sample and the mirror image dipole in the metallic AFM tip.  This interaction is strongly affected by the optical absorption spectrum of the sample, thereby providing a significant spectral contrast mechanism which can be used to differentiate between chemical species.  Due to its AFM heritage, PiFM acquires both the topography and spectral images concurrently and naturally provides information on the relationship between local chemistry and topology.  Due to the steep dipole-dipole force dependence on the tip-sample gap distance, PiFM spectral images have spatial resolution approaching  the topographic resolution of AFM,  demonstrating sub 10 nm spatial resolution on a variety of samples.

The capabilities of PiFM are highlighted by studies on various self-assembled block copolymer systems.  The results consist of PiFM spectral images associated with several absorption bands of different polymeric blocks along with broad spectra associated with nano-spots on sample surfaces.   Images of fingerprint patterns and parallel lamellae (prepared via directed self-assembly) for both poly (styrene-b-methyl methacrylate) and poly (styrene-b-2-vinylpyridine) show clear spectral contrast between the two blocks of each material system.  For poly (styrene-b-2-vinylpyridine), PiFM contrast between blocks was far greater than is generally available by scanning electron microscopy without staining.  By enabling imaging at the nm-scale with chemical specificity, PiFM provides a powerful new analytical method for deepening our understanding of nanomaterials and facilitating technological applications of such materials.

SPEAKER BIOGRAPHY:
Thomas Albrecht received a B.A. in physics from Carleton College in 1985 and a Ph.D. in applied physics from Stanford University in 1989.  His thesis work on atomic force microscopy (AFM) included the first microfabricated cantilevers for AFM and the first demonstration of atomic resolution by AFM.  After completing graduate school, Tom worked briefly for Park Scientific Instruments to transfer the fabrication process for microcantilevers and to help develop Park’s first AFM product.

In 1989, Tom joined the IBM Almaden Research Center (San Jose, CA) where his contributions included frequency modulation detection for AFM, and a variety of contributions to magnetic recording technology, such as a track following servo system that became the industry standard for tape drives, load/unload technology for disk drives, and the “Microdrive” – a tiny 1-inch drive that was used in consumer electronics devices such as the Apple iPod Mini.  From 2002 to 2004, Tom worked on assignment at the IBM Zurich Research lab (Switzerland), where he contributed to and briefly managed the “Millipede” micromechanical data storage project.

In 2004, Tom joined Hitachi Global Storage Technologies (HGST, San Jose) where he led the company’s patterned media research team for 10 years.  The patterned media project involved an ambitious combination of nanofabrication technologies, including e-beam, self-assembly, double patterning, and nanoimprint lithography.  In 2013, he was named an HGST Fellow for lifetime contributions to the magnetic data storage industry.

In 2015, Tom joined Molecular Vista (San Jose) to bring to market a promising new technology combining AFM with optical spectroscopy to provide chemical imaging with nanometer-scale spatial resolution.

Tom has 148 issued U.S. patents and numerous publications.

AGENDA:

  • 11:30 am – Registration & light lunch (pizza & drinks)
  • Noon – Presentation & Questions/Answers
  • 1:00 pm – Adjourn
COST: FREE

Please register here.
Also, visit our Meetup Group.


Anne SakdinawatTuesday, January 19, 2016 
Noon – 1  pm
Texas Instruments (TI) Auditorium E-1
2900 Semiconductor Drive
Santa Clara, CA
map

Admission FREE. Please register here.

 

TITLE: Imaging at Very Short Wavelengths Using Nanotechnology

 

SPEAKER: Dr. Anne Sakdinawat, SLAC National Accelerator Laboratory

 

ABSTRACT:
The field of X-ray imaging has not only contributed to a wide range of basic sciences, but also many industries, such as medical imaging, non-destructive testing, and security. Due to the ability to image through thick objects with high resolution and in some cases, with elemental identification and femtosecond time resolution, x-ray imaging in biological, chemical, and physical sciences is a very powerful tool. Examples of this include tomography of whole unstained cells, in-situ nanoscale imaging of battery components with elemental specificity, and imaging of magnetic domains. While sophisticated x-ray instrumentation has been developed for use with synchrotron radiation, translation to lab-based use still remains a challenge. A major goal in x-ray imaging is to be able to develop new lab-based technologies with improved imaging capabilities that currently exist at synchrotrons.

SPEAKER BIOGRAPHY:
Dr. Anne Sakdinawat is currently a scientist at SLAC National Accelerator Laboratory where she serves as a group leader in x-ray optics and imaging. Her research interests include the development of new x-ray imaging, optics, nanofabrication techniques and translational research for biomedical and materials applications. She received her doctorate in bioengineering from the University of California at Berkeley and San Francisco and has received the Werner Meyer-Ilse Award for Excellence in X-ray Microscopy and the Department of Energy Early Career Award.

AGENDA:

  • 11:30 am – Registration & light lunch (pizza & drinks)
  • Noon – Presentation & Questions/Answers
  • 1:00 pm – Adjourn
COST: FREE

Please register here.
Also, visit our Meetup Group.


 

Tuesday, December 15, 2015 151215 Charlie Hotz Nanosys Noon – 1  pm
Texas Instruments (TI) Auditorium E-1
2900 Semiconductor Drive
Santa Clara, CA
map

This seminar is being cosponsored by the Santa Clara Valley Chapter of the IEEE Vehicular Technology Society.

 

TITLE: Bringing Better Pixels to UHD with Quantum Dots
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SPEAKER: Dr. Charlie Hotz, Vice President of R&D, Nanosys

 

 

ABSTRACT:
Advances in Quantum Dot chemistry and synthesis have made them an ideal emitter for backlight units in LCDs, with over 25 retail SKUs using Quantum Dots now available ranging from 7” tablet size up to 85” TV size. The next wave of technology innovation in displays is upon us now with Ultra-High Definition, whose most well-known benefit is an increase in resolution from HD to 4K, but there is much more to this new broadcast specification. High dynamic range (HDR) and wide color gamut (WCG) bring more perceptible benefits to users in terms of an improved viewing experience than improved resolution alone.
The ultra-high color gamut standard adopted for UHD broadcast, known as Rec. 2020, was originally defined for laser-based projectors where the color primaries are on the color locus of the CIE diagram. Due to the deeply saturated color coordinates, Rec. 2020 is beyond the capabilities of OLEDs and conventional LED backlit LCDs. So is the Rec. 2020 color standard reachable for consumer displays or is it only for high-end laser-based projection systems? This presentation will explore the capability of using quantum dots in LCDs to reach the ultra-high color gamut of Rec. 2020.

SPEAKER BIOGRAPHY:
Dr. Charlie Hotz sets the vision for Nanosys’ design, invention of new products and development of existing products. Dr. Hotz has been with Nanosys for 2 years and has developed the company’s large-scale QD synthesis processes and equipment, including working with all the regulatory bodies such as the EPA and local jurisdictions.

Prior to Nanosys, Dr. Hotz was Vice President, R&D for 6 years at Solexant, a QD based photovoltaics company where he develop the first ever high efficiency QD solar cells.  Dr. Hotz also served as Vice President of R&D for 7 years at Quantum Dot Corporation, where he developed many QD products for diagnostic and biological applications which are still in use today at Thermo-Fischer, who acquired Quantum Dot Corporation.  Charlie has a Ph.D. in Chemistry from Michigan.

AGENDA:

  • 11:30 am – Registration & light lunch (pizza & drinks)
  • Noon – Presentation & Questions/Answers
  • 1:00 pm – Adjourn
COST: FREE

Please RSVP here by Monday December 14 at 5PM.


Join us for our 11th Annual Half Day Fall Symposium on Biomimetic Nanotechnology

Tuesday Nov 17, 2015
Registration opens: 12:00 PM
Conference: 1:00 PM – 4:30 PM
Texas Instruments (TI) Auditorium E-1
2900 Semiconductor Drive
Santa Clara, CA
map

biomimetic-banner

Everywhere in nature, nanoscale features enable macro-scale phenomena.
• How is it that geckos can cling to smooth vertical surfaces and never lose their grip?
• What makes butterfly wings iridescent?
• How do chameleons change their hue?
• What keeps lily pads dry in a rainstorm?
The answer is specialized nanostructures!
Come on Nov. 17 and learn about fascinating examples of biomimicry on the nanoscale.

The symposium will also provide a forum for networking and the exchange of information among local academics, students, scientists, engineers, early stage venture capitalists and entrepreneurs who share an interest in nanotechnology and its biomimetic applications.

Speakers Panel

Biomimicry-speakers

Nanostructured Interfaces for Therapeutic Delivery–Tejal Desai, UC San Francisco

Lessons from Brain Connectivity for Next Gen 3D NanoICs–Jan Rabaey, UC Berkeley

Nanopore Sequencing of DNA Comes of Age–Hugh Olsen and Miten Jain, UC Santa Cruz

A Chameleon-Inspired Stretchable Electronic Skin–Ho-Hsiu Chou, Stanford University

There will also be a student poster session displaying student research in nanotechnology.

Fees (online registration):
IEEE Members: $25
Non-IEEE Members: $35
Unemployed/Between Jobs: $20
Students (with ID): $15
Save $5 with early registration — by November 10th
Add $10 for Registration at the door

Please register here.
Also, visit our Meetup Group.

Agenda:

12:00 Registration Begins
12:30 Networking and Lunch
1:00 Symposium begins

Tuesday, October 20, 2015
Noon – 1  pm
Texas Instruments (TI) Auditorium E-1
2900 Semiconductor Drive
Santa Clara, CA
map

Admission FREE, RSVP here by Monday October 19 at 5PM.

 

TITLE: Graphene: The magic material of this century
 
SPEAKER: Dr. Ashok K. Kapoor, Vice President, Silicon Valley operations of PhotonIC Corp
 

 

 
ABSTRACT:
This talk will cover the promise of graphene in various fields starting with semiconductor devices and extending to photonics, energy storage, various sensors and MEMS, and biomedical applications. Graphene was first synthesized in a laboratory in 2003 by Andre Geim and Konstantin Novoselov in the University of Manchester and theseresearchers won a Nobel prize for their work in 2010. The market for graphene has been growing very rapidly, havingreached $9M in 2014. This talk will cover the material properties of graphene which make it special and explore some of the applications going beyond the typical transistors.

SPEAKER BIOGRAPHY:
Ashok K. Kapoor received the B.Tech. degree in electrical engineering from the Indian Institute of Technology (IIT), Kanpur, India, in 1973, and the M.S. and Ph.D. degrees from the University of Cincinnati, Cincinnati, OH, in 1979 and 1981, respectively. He started his career working for the Fairchild Research Center, PaloAlto, CA, as a Member of the Research Staff. Later, he worked for Hewlett Packard integrated circuit research group, at LSI LOGIC where he managed the Device Technology Group which included device modeling, TCAD, and device reliability and also managed the testing laboratory and at National Semiconductor Corp as the Director of Research. Since 2001, he has cofounded multiple startups, including Sensitron to develop systems based on wireless networked sensor, SemiSolutions which worked on leakage reduction in nanoscale MOS transistors and in, 2005, he cofounded DSM Solutions to develop complementary JFET technology for lowpower VLSI, and worked as the Chief Technology Officer. In 2011, he joined APIC/Photonic Corp to head the Silicon Valley Operations, working on integration of photonic with CMOS as the founder of the Silicon Valley Operations of the company.Also, he manages the technical collaboration with Universities for the company. He was deeply involved with the research consortium SRC in various capacities during early 1990s, as a Member of the Executive Technical Advisory Board from 1992to 1996. In 1995, he was elected as the CoChair of the Executive Technical Advisor Board of the SRC where he helped set direction of the research funding . He was also a Member of the SIA Roadmap Committee from its initiation until 1997. He has coauthored over 30 publications and is listed as an inventor or coinventor of over 100 U.S. patents. He was the recipient of the Inventor of the Year Award from LSI Logic in 1995. Dr. Kapoor is a member of the IEEE Electron Devices Society, photonic society, Optical Society of America, Material Research Society, and Sigma Xi. His current research is centered onhigh performance silicon photonics.

AGENDA:

  • 11:30 am – Registration & light lunch (pizza & drinks)
  • Noon – Presentation & Questions/Answers
  • 1:00 pm – Adjourn
COST: FREE

 
Please RSVP here by Monday October 19 at 5PM.


Tuesday, September 15, 2015
Noon – 1  pm
Texas Instruments (TI) Auditorium E-1
2900 Semiconductor Drive
Santa Clara, CA
map

 

TITLE: Emerging Non-volatile Memory, enabled by Carbon Nano-materials
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SPEAKER: Dr. Ethan C. Ahn, Dept of Electrical Engineering, Stanford Nanoelectronics Lab
 

ABSTRACT:
With the advent of so-called ‘big data’ era and the increasing need for greater storage capacity in various mobile and wearable devices, it is becoming more important to explore a new storage-class memory technology. As illustrated in recent research articles and papers, significant progress on emerging non-volatile memory (NVM) devices such as spin-transfer-torque magnetic random access memory (STT-MRAM), resistive or metal-oxide RAM (RRAM), or phase-change memory (PCM), made it possible to replace the mainstream NVM (NAND Flash) and even reach certain on-chip memory requirements (e.g., L2/L3 SRAM cache). This is important, as the energy efficiency of computing circuits/systems has been increasingly limited by the memory and storage devices. In this talk, a frontier research on the near- and long- term potential of emerging nanoscale memory devices and architectures will be discussed to replace ultimately scaled CMOS memory device technologies. The emerging 1TnR (one-transistor-n-resistors) array architecture with carbon nanotube field-effect transistor as one-dimensional selection device and thus reduced sneak leakage is demonstrated as a cost-effective and 3D-stackable solution. The integrated bipolar RRAM device, for example, exhibits self-compliance characteristics with high endurance and fast switching speed. It is pointed out that the carbon nanotube electrode brings the (lithography-free) critical dimension of the memory device down to a single-digit-nanometer. The novel thermal engineering technique for low-power NVM applications is also introduced using a monolayer graphene as an interfacial thermal barrier. The programming (RESET) current of the graphene-inserted PCM device is reduced by about 40% due to an improved thermal efficiency. The status, key challenges, and promising applications of the RRAM, PCM, and STT-MRAM technologies will be briefly discussed in the talk.

SPEAKER BIOGRAPHY:
Dr. Ahn received the Ph.D. in Electrical Engineering (EE) at Stanford University in 2015, working under the supervision of Professor H.-S. Philip Wong. He joined Stanford University in 2010, after a 3-year research career on Spintronic devices (STT-MRAM) with the Korea Institute of Science and Technology (KIST) in Seoul, Korea. While at KIST, he initiated the collaborative research program with Michigan State University to study spin-dependent transports in magnetic multilayers and spinvalves. He received the B.S. and M.S. degrees in EE from the Korean Advanced Institute of Science and Technology (KAIST) in Daejeon, Korea. He is the author of over 10 peer-reviewed research journal papers in electrical engineering and applied physics, over 20 premier international conference papers, and one book chapter of Emerging Nanoelectronic Devices (ed. A. Chen, John Wiley & Sons, Ltd, Jan. 2015). His primary research interests include emerging non-volatile memory devices and architectures (including Metal-oxide RAM and Phase-Change Memory), beyond CMOS electronics (utilizing Carbon Nano-materials such as Carbon Nanotube and graphene), and various spintronic devices (including STT-MRAM and Spin-FET). Dr. Ahn has been the recipient of numerous awards and honors, including John Bardeen Student Research Award for Excellence in Nanodevice Research (2014), Best Summer Research Intern Award by T.-C. Chen at IBM T. J. Watson (2013), and GE Scholarships (2004).

AGENDA:

  • 11:30 am – Registration & light lunch (pizza & drinks)
  • Noon – Presentation & Questions/Answers
  • 1:00 pm – Adjourn
COST: FREE

 

Please RSVP here to make sure we have enough lunch.