SF Bay Area Nanotechnology Council

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  • IEEE San Francisco Bay Area Nanotechnology Council is the nanotechnology leader for the IEEE's San Francisco / Oakland Eastbay / Santa Clara Valley Joint Section.

    Regular events include a monthly lunch presentation (typically the 3rd Tuesday) and annual symposiums.

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Archive for November, 2012

Atomistic aspects of the resistive switching characteristics in RRAM devices

Friday, November 9th, 2012

December 4, 2012 Noon – 1  pm
Texas Instruments (TI) Auditorium E-1
2900 Semiconductor Drive
Santa Clara, CA

 

TITLE: Atomistic aspects of the resistive switching characteristics in RRAM devices

SPEAKER: Blanka Magyari-Köpe, Senior Research Engineer, EE Department, Stanford

ABSTRACT:
Recently, numerous experimental and theoretical investigations are undertaken in academia as well as various product-oriented efforts are going on in industry for resistives witching memory. The rapid rise in publications for RRAM have mostly dealt with resistive switching mechanism, electronic conduction mechanisms for both “ON” and “OFF” state, formation and annihilation of conductive paths, and addressing scalability, retention and endurance issues. Perhaps still the major “unknown” is how we can reach clearer understanding of resistive switching mechanism by a rigorous physics based modeling which can serve for materials and structural optimization of RRAM cell, followed by selection devices and memory array configurations. This talk will discuss (1) progress made for switching mechanisms for resistive switching in terms of “ON” and “OFF” state formation energies, which has implications to switching power scaling coupled with retention characteristics, (2) physical mechanism of the “ON” conduction by using ab-initio simulation techniques which delineate the role of oxygen vacancies in forming a conductive filament in transition metal oxides, (3) investigation of various metal electrodes and dopants effects, to assess the scalability and endurance in terms of programming power reduction as well as variability improvement and retention characteristics.

SPEAKER BIOGRAPHY:
Blanka Magyari-Köpe received her Ph.D. degree in physics from the Royal Institute of Technology, Stockholm, Sweden, in 2003. Since 2006, she has been an engineering Research Associate and from 2011 a Senior Research Engineer in the Department of Electrical Engineering at Stanford University. Prior to this position she was a postdoctoral researcher in the Department of Materials Science and Engineering, University of California, Los Angeles.
Her research interests include adapting and applying high-precision, accurate and efficient quantum mechanical modeling to real applications. She had been working on the analysis and fundamental understanding of electronic properties of novel and technologically relevant materials, i.e., perovskites, metal alloys, hydrogen storage materials, metal gate/high-k MOS structures and RRAM device materials. Currently, she is involved in projects that involve understanding the RRAM switching mechanism and the role and control of nanointerfaces between metallic, insulating, and semiconducting materials, seeking solutions for how to design and manipulate them at the atomic level to achieve increased performance in electronic devices.. She has given over 24 invited talks and has published more than 40 scientific papers.

AGENDA:

  • 11:30 am – Registration & light lunch (pizza & drinks)
  • Noon – Presentation & Questions/Answers
  • 1:00 pm - Adjourn
COST: IEEE Members: $5, Non-members:$10

NanoMEMS – Dr. Héctor J. De Los Santos, Distinguished Lecturer

Tuesday, November 6th, 2012

Tuesday, November 13, 2012 Noon – 1  pm
TI Auditorium E-1
2900 Semiconductor Drive
Santa Clara, CA

 

The IEEE SFBA Nanotechnology Council has teamed up with the IEEE Electron Devices Society SCV Chapter to bring you Distinguished Lecturer Hector De Los Santos from Los Angeles to talk about NanoMEMS and its role as an enabler of ubiquitous wireless connectivity.


 


 

TITLE: NanoMEMS
NanoMEMS exploits the convergence between nanotechnology and microelectromechanical systems (MEMS) brought about by advances in the ability to fabricate nanometer-scale electronic and mechanical device structures. While the “Nano” aspect of this field is in its infancy, and is not expected to reach maturity until well into the 21st century, its “MEMS” aspect is a topic of much current and near-term impact in, for instance, inertial sensing, biomedicine, optical and RF/Wireless communications. In this context, we will begin this talk by discussing the fundamentals of NanoMEMS, in particular, as it relates to its most speculative and futuristic paradigms and applications, and then will focus on the RF/Wireless MEMS aspect, specifically in its role as enabler of ubiquitous wireless connectivity. We conclude by pointing out potential pitfalls to be encountered in its development, in particular, by addressing the subjects of stiction and pull-in in the contexts of varactors (Casimir effect) and switches.

SPEAKER: Dr. Héctor J. De Los Santos, NanoMEMS Research, LLC, Irvine, Ca

Héctor J. De Los Santos received the Ph.D. degree from the School of Electrical Engineering, Purdue University, West Lafayette, IN, in 1989. Prior to founding NanoMEMS in 2002, he spent two years as Principal Scientist at Coventor, Inc., Irvine, CA, and eleven years at Hughes Space and Communications Company, Los Angeles, where he served as Principal Investigator and Director of the Future Enabling Technologies IR&D Program where he pursued research in the areas of RF MEMS, Quantum Functional Devices and Circuits, and Photonic Bandgap Devices and Circuits. He holds over 20 US and European patents, and is author of bestseller textbooks, including Introduction to Microelectromechanical (MEM) Microwave Systems (1999), and RF MEMS Circuit Design for Wireless Communications (2001). His most recent book, Principles and Applications of NanoMEMS Physics, was published in 2005.

Dr. De Los Santos is a member of Tau Beta Pi, Eta Kappa Nu, and Sigma Xi. From 2001-2003 he lectured worldwide as an IEEE Distinguished Lecturer of the Microwave Theory and Techniques Society. Since 2006 he is an IEEE Distinguished Lecturer of the Electron Devices Society. His current research interests include, discovery, conception, theory, physics, computational modeling, simulation, analysis, design and applications (electronic, microwave and mm-waves, photonics, etc.) of devices and circuits enabled by exploiting physical phenomena occurring down to nanometer length scales, including, plasmonics, photonic crystals, RF MEMS, and mechanical systems in the quantum regime.

Dr. De Los Santos serves as a reviewer for several technical journals, including, JMEMS, T-ED, T-MTT, T-NANO, and APL, and funding agencies, in particular, the National Science Foundation (NSF), the European Science Foundation, the Australian Research Council (ARC), and the Natural Sciences and Engineering Research Council (NSERC) of Canada. He is an IEEE Fellow.

AGENDA:

  • 11:30 am – Registration & light lunch (pizza & drinks)
  • Noon – Presentation & Questions/Answers
  • 1:00 pm - Adjourn
COST: IEEE Members: $5, Non-members:$10