SF Bay Area Nanotechnology Council

IEEE

Archive for the ‘Events’ Category

November 14th, 2017: Entrepreneurial Paths – Not Just Nanotech

Sunday, October 22nd, 2017

Entrepreneurial Paths – Not Just Nanotech

Co-sponsors: IEEE Consumer Electronics Society , IEEE Technology and Engineering Management Society

Presentations, Panel Discussion, Q&A
Register: Here

Tuesday, November 14, 2017 – 12:45 PM to 4:45 PM
Cost: $10 – discounts for IEEE Members, Students & Unemployed

Location: Texas Instruments Building E Conference Center
2900 Semiconductor Dr., Santa Clara, CA 95052
See the TI Building location map and directions

Programme:

12:45               Registration

  1:00               Welcome

                             Glenn Friedman, Chair, SFBA Nanotechnology Council

                             KRS Murthy, Event Chair, ExCom member, SFBA Nanotechnology Council

  1:10               Innovation, Entrepreneurship, Building Successful Companies

                             Dr. Srinivas Rao, President & CEO, Senova Systems;

                             Operating Partner, Phoenix Venture Partners

  1:45               Protecting Your Nanotech

                             Steven A. Swernofsky, Patent Attorney; Managing Director Los Altos Law

  2:20               Break

  2:30               SBIR Funds: A Startup’s Oasis in the Valley of Death

                             Spenser Hamilton, Business Advisor;

                             San Mateo Small Business Development Center

  3:05               Federal SBIRs as Vehicles for Small Businesses

                             Ryszard Pisarski, NASA Ames Research Center

                             Geetha R Dholakia, REI Systems, NASA Ames Research Center

  3:40               Panel Discussion – to include presenters and also:

                             Dr. Radoslav Danilak, CEO of Tachyum

                             Mr. Kameshwar Eranki, Founder & CEO of VajraSoft Inc.

  4:30               Networking: Attendees, Presenters, Panelists

  5:00               End

 

Abstracts & Biographies:

Innovation, Entrepreneurship, Building Successful Companies

     Dr. Srinivas Rao is an industry leader with a distinguished track record of material science technology development and commercialization. Until recently, he was Vice President of Corporate Technology at Flextronics International, Ltd. (NASDAQ: FLEX), a multi-billion dollar, global provider of vertically integrated advanced design and electronics manufacturing services. Earlier in his career, he was Vice President of Technology at Solectron Corporation, where he was responsible for engineering and product development, helping grow the company from $190 million to $22 billion in revenues and from one site to over 70 sites worldwide. Previously, Dr. Rao was a Senior Scientist at Raychem Corporation and held technology management and research positions at Eastman Kodak Research Laboratories and RCA Laboratories, where he received RCA’s Outstanding Achievement Award. Dr. Rao is a Distinguished Alumnus of Indian Institute of Technology Madras where he earned a B.Tech degree in Metallurgical Engineering, and an MS and PhD in Metallurgy and Materials Science from the Stevens Institute of Technology. He holds numerous patents and is the author of numerous papers and review chapters. He has also held distinguished positions in several technical organizations, including Chair of the Editorial Committee of Surface Mount Technology, Chair of the Electronic Materials Committee at the American Society for Metals, and Chair of the Electronic Manufacturing Services of IEEE’s CPMT. He has also served on the editorial board of the International Society for Hybrid Microelectronics, Future Circuits International, the International Review of Circuit Board Manufacturing Technology, and, in 2005, served on the Blue Ribbon Task Force on Nanotechnology for the State of California.

 

Protecting Your Nanotech

Nanotechnology is a rapidly growing field where legal protection can be key. In this presentation we will answer important questions like: what is the law that applies to new ideas? Who owns them? What value do they have? What can you do with them? Both startups and established companies have a serious interest in the care and protection of new ideas. How is it done? How do we know when we’ve done something patentable?

     Steven A. Swernofsky is a patent attorney with over 25 years experience obtaining and litigating patents. He focuses on maximizing the value clients obtain for their legal dollars. This includes advising on how to best protect new ideas, growing and managing patent portfolios, advising on litigation, and licensing intellectual property. He is Managing Director at Los Altos Law, which regularly teams with inventors and in-house legal departments, as well as key executives, investors, and other litigation counsel, to protect intellectual property and promote business interests. His patents have been successfully sued on by major companies for millions of dollars.

Mr. Swernofsky earned a BS from MIT, where he studied electrical engineering and computer science, with emphasis on computer networking, security, and artificial intelligence. He worked at MITRE and BBN in those fields before he attended law school at UCLA. His practice has led him to a wide range of high technology fields, including artificial intelligence and machine learning, augmented and virtual reality, bioinformatics and computations chemistry, wired and wireless computer networking, analog and digital circuit design, microprocessor design, semiconductor design and manufacturing, medical devices and instruments, and robotics. He is also enrolled as an arbitrator with FINRA.

 

SBIR Funds: A Startup’s Oasis in the Valley of Death

Many early-stage companies face a significant funding gap when trying to develop new technology, from the translational research to the proof of concept. This funding gap is sometimes referred to as the “valley of death”, a reflection of the vast number of companies that are unable to raise the needed capital to progress towards commercialization. The suggestion behind the “valley of death” phrase is that companies that should be able to attract investment do not get funded, because the technical risks inherent in technology development are high. Ultimately, the valley of death reflects the perceived imbalance of risk and reward for an investment at this stage as well as the resulting difficulty for a technology company of harder sciences in raising capital during this time. In an effort to bridge the gap, the Small Business Innovation Research (SBIR) program encourages domestic small businesses to engage in Federal Research/Research and Development (R/R&D) that has the potential for commercialization. Through a competitive awards-based program, SBIR enables small businesses to explore their technological potential and provides the incentive to profit from its commercialization. By including qualified small businesses in the nation’s R&D arena, high-tech innovation is stimulated, and the United States gains entrepreneurial spirit as it meets its specific research and development needs. The mission of the SBIR program is to support scientific excellence and technological innovation through the investment of Federal research funds in critical American priorities to build a strong national economy.

     Spenser Hamilton has expertise in areas including valuation, business strategy, operations efficiency, market research and new product development. He has advised or invested in companies with technologies ranging from mobile devices, clean tech, healthcare IT, and medical devices. Spencer’s prior work experience includes clinical settings, investment funds, and Corporate America. He holds a BA and an MBA from the University of Southern California and Johns Hopkins University, respectively. In addition, he has lectured on entrepreneurship, innovation, and R&D funding at forums and colleges in US and abroad.

 

NASA SBIR STTR Program

The Federal SBIR/STTR program is called the nation’s seed fund for entrepreneurs. The talk will focus on NASA’s contribution to the SBIR/STTR program. This will include the details of how the program is implemented at NASA, a description of how the technologies flow into NASA’s programs and will highlight some success stories from the program.

     Dr. Ryszard Pisarski is the SBIR/STTR Technology Infusion Manager for the NASA SBIR/STTR program management office. In this capacity he co-ordinates with all ten NASA centers and facilitates activities that lead to infusion of SBIR/STTR technology into NASA programs. Dr. Pisarski obtained his Ph.D. in Astrophysics from Columbia University in 1984 and his MBA from the Stern School of Business at NYU in 1999. He worked at NASA/Goddard Space Flight Center developing flight and data analysis software for the Cosmic Background Explorer (COBE) and was a project manager for a joint US/German/UK astrophysics mission – ROSAT.  Dr. Pisarski was a branch head for the Astrophysical Data Facility at GSFC, responsible for managing a group of scientists developing software and analysis techniques for various astrophysics flight missions. In 2000 Dr. Pisarski moved to NASA Ames’s Research Center and worked in partnerships prior to the SBIR/STTR program management office.

 

Federal SBIRs as Vehicles for Small Businesses

The talk will focus on the NASA SBIR program, the technical and logistical planning required to submit a good proposal and some examples of successful nanotechnology awards.

     Geetha R Dholakia, REI Systems Inc. and NASA Ames Research Center, works at the NASA Ames SBIR/STTR program management office as the technology transfer specialist. She received a PhD in condensed matter physics from the Indian Institute of Science, Bangalore, India. She has performed research in electronic transport in the nanoscale, soft condensed matter and nanomaterials synthesis at NASA Ames Research Center. She also has extensive experience in physics based instrumentation for scanning microscopy, miniaturization of instruments for NASA on-board planetary missions and in nanosatellite trade studies. Prior to joining the NASA SBIR program, she worked as a technology consultant with SmallTech Consulting and later in technical business development for the NASA Ames partnerships office.

 

November 20th, 2017: Semiconductor Nanowires for Optoelectronic and Energy Applications

Sunday, October 22nd, 2017

TALK:  Semiconductor Nanowires for Optoelectronic and Energy Applications

Co-sponsor: IEEE Photonics Society

SPEAKER:

Professor Hoe Tan

Department of Electronic Materials Engineering, Research School of Physics and Engineering
The Australian National University

Monday, November 20, 2017  11:30 AM – 1:00  PM

Texas Instruments (TI) Auditorium E-1
2900 Semiconductor Drive
Santa Clara, CA  map

Cost $6, discount for IEEE Members, Students & Unemployed. Please register here.

ABSTRACT:

The excitement of nanowire research is due to the unique electronic and optical properties of these nanostructures. Both axial and radial heterostructure nanowires have been proposed as nano-building blocks for the next generation devices, which are expected to revolutionise our technological world. Unique properties stem from nanowires’ large surface area-to-volume ratio, very high aspect ratio, and carrier and photon confinement in two dimensions. These nanowires are usually grown by the so-called vapor-liquid-solid mechanism, which relies on a metal nanoparticle to catalyze and seed the growth. An alternative technique to grow the nanowires is by selective area growth technique, where a dielectric mask is first patterned on the substrate prior to growth.

In this talk, I will present an overview of compound semiconductor nanowire research activities at The Australian National University. The optical and structural properties of binary and ternary III-V nanowires including GaAs, InGaAs, InP and GaAsSb nanowires grown by metal-organic vapour phase epitaxy will be presented. Various issues such as tapering of the nanowires, compositional non-uniformity along nanowires, crystal structure, carrier lifetime and polarization effect will be discussed.

I will also present our results of III-V nanowires grown on Si substrates which are of great interests for the integration of nano-optoelectronic devices on Si platforms. Our results of enhancing the quantum efficiency of nanowires by using plasmonics are promising to improve the performance of nanowire devices.

Finally, the results from our nanowire lasers, photodetectors, solar cells and photoelectrodes for water splitting will be presented.

SPEAKER BIOGRAPHY:

Prof. Tan is currently the Head of the Department of Electronic Materials Engineering at the Research School of Physics and Engineering, The Australian National University. Tan received his B.E. (Hons) in Electrical Engineering from the University of Melbourne in 1992, after which he worked with Osram in Malaysia as a quality assurance engineer. In 1997, he was awarded the PhD degree from the Australian National University for his dissertation on “Ion beam effects in GaAs-AlGaAs materials and devices”. He is a past recipient of the Australian Research Council Postdoctoral, QEII and Future Fellowships. He has published/co-published over 350 journal papers, including four book chapters. He is also a co-inventor in 4 US patents related to laser diodes and infrared photodetectors. His research interests include epitaxial growth of low-dimensional compound semiconductors, nanostructured optoelectronic devices and ion-implantation processing of compound semiconductors for optoelectronic device applications. Prof. Tan is a Senior Member of the IEEE and is the Distinguished Lecturer for IEEE Nanotechnology Council (2016) and IEEE Photonics Society (2016-2017).

  • 11:30 am – Registration & light lunch (pizza & drinks)
  • Noon – Presentation & Questions/Answers
  • 1:00 pm – Adjournment
COST: $6, discount for IEEE Members, Students & Unemployed.

 

October 17th 2017: Triboelectric Nanogenerator for NASA Mars Mission, Space Manufacturing & Next Generation Mechanical Energy Harvesting

Monday, October 9th, 2017

TALK: Triboelectric Nanogenerator for NASA Mars Mission, Space Manufacturing & Next Generation Mechanical Energy Harvesting

SPEAKER:

Myeong-Lok Seol

Research Scientist, NASA

Tuesday, October 17, 2017  11:30 AM – 1:00  PM

Texas Instruments (TI) Auditorium E-1
2900 Semiconductor Drive
Santa Clara, CA  map

Cost $6, discount for IEEE Members, Students & Unemployed. Please register here.

ABSTRACT:

Demand for mobile power sources is increasing with the growth of wireless sensor network, mobile healthcare devices, and internet-of-things (IoT). Currently, most applications use a battery as the sole power source, but all the batteries have a limited lifetime and require costly replacement and recharging, limiting the application area. Energy harvesting is a process that converts various types of ambient energy sources into electrical energy. By implementing energy harvesters, small-electronic systems can extend lifetime, reduce maintenance cost, and become more sustainable. Triboelectric nanogenerator is a mechanical energy harvester based on triboelectricity created at the contact interface between two different materials. Triboelectric nanogenerators are light in weight, generate high output power, require low material and manufacturing costs, and have a strong development potential.

In this talk, the background and fundamental principles of the triboelectric nanogenerator will be introduced. In addition, recent research progress of triboelectric nanogenerators for interplanetary missions in NASA will be presented.

SPEAKER BIOGRAPHY:

Myeong-Lok Seol is a Research Scientist at NASA Ames Research Center. His research interests include energy harvesting, nanotechnology-enabled electronics and sensors, functional nanostructures and nanomaterials. Currently, he is developing a triboelectric nanogenerator for interplanetary missions and all-printed energy harvester for autonomous manufacturing in space. He received his B.S. degree in 2010 and his Ph.D. degree in 2016 from Korea Advanced Institute of Science and Technology (KAIST), Korea. He has published 55 international journals, 7 international conferences, and 8 patents.

  • 11:30 am – Registration & light lunch (pizza & drinks)
  • Noon – Presentation & Questions/Answers
  • 1:00 pm – Adjournment
COST: $6, discount for IEEE Members, Students & Unemployed.

 

Upcoming Events

Sunday, September 10th, 2017

On November 20th, 2017, Distinguished Lecturer Professor Hoe Tan of the Australian National University, Canberra, Australia joins us to provide an overview of compound semiconductor nanowire research activities at The Australian National University for Optoelectronic and Energy Applications. Please register here.

September 19th, 2017: Company Origin Stories – Exploring Entrepreneurship

Sunday, September 10th, 2017

Company Origin Stories – Exploring Entrepreneurship
Nanotech company founders explain how and why they started their enterprises
Register: Here

Tues Sept 19 – 5:30 PM to 9:15 PM
Cost: $17 – includes dinner – discounts for IEEE Members, Students & Unemployed

Location: Texas Instruments Building E Conference Center
2900 Semiconductor Dr., Santa Clara, CA 95052
See the TI Building location map and directions

Presenting Companies include:

View Dynamic Glass – Architectural “smart glass” using electrochromism from nano-scale layers of metal oxides. Raised $650M and has completed installation at several hundred sites. Read More

Nano Precision Medical – Subdermal implants using nano-structured membranes to provide long-term therapeutics for the treatment of chronic diseases. Read More

 

Fibralign – Biomedical devices based on artificial nano-structured collagen. Read More

August 15th 2017: 2D Materials Advantages and Challenges Towards Applications

Saturday, July 29th, 2017

TITLE: 2D Materials Advantages and Challenges Towards Applications

SPEAKER:

Ching-Hua (Fiona) Wang, PhD. Student

Electrical Engineering Department, Stanford University

Tuesday, August 15, 2017  11:30 AM – 1:00  pm

Texas Instruments (TI) Auditorium E-1
2900 Semiconductor Drive
Santa Clara, CA  map

Cost $6, discount for IEEE Members, Students & Unemployed. Please register here.

ABSTRACT:

Two-dimensional (2D) materials present unique opportunities for next generation ultra-thin electronics. However, practical 2D devices can only be realized after overcoming key challenges: contact resistance, stable doping, and uniform growth.
In this talk I will highlight the recent research our group has implemented to improve contact and doping in BP and MoS2 transistors.   I will then show our work beyond transistor applications using 2D materials, such as graphene-Cu interconnects and hBN-RRAM, that are promising for three-dimensional integrated electronics.

  • 11:30 am – Registration & light lunch (pizza & drinks)
  • Noon – Presentation & Questions/Answers
  • 1:00 pm – Adjourn
COST: $6, discount for IEEE Members, Students & Unemployed.

Materials Studies of New High Efficiency Solar Absorbers

Monday, March 21st, 2016

TITLE: Materials Studies of New High Efficiency Perovskite Solar Absorbers

SPEAKER: Dr. Mike Toney, SLAC National Accelerator Laboratory & Stanford UniversityDr.Mike Toney

Tuesday, April 19th, 2016  11:30 AM – 1:00  pm
Texas Instruments (TI) Auditorium E-1
2900 Semiconductor Drive
Santa Clara, CA
map

Admission FREE ($5 donation requested). Please register here.

Cosponsored by IEEE Santa Clara Valley Photovoltaic Section and IEEE Santa Clara Valley Photonics Society

ABSTRACT:

Organic-inorganic halide perovskite films (e.g., methylammonium lead iodide  xrd3 or CH3NH3PbI3) were first employed as light absorbing layers in photovoltaic (PV) devices in 2009, and produced relatively modest power conversion efficiencies (PCEs) of 3.8%.Since then, the development of perovskite solar cells has been meteoric, with PCEs increasing from 3.8% to over 21% in just over five years.

The combination of high extinction coefficients, long charge carrier diffusion lengths and compatibility with low cost, solution-based fabrication processes gives these materials enormous commercial potential.

A significant appeal of CH3NH3PbI3 is their facile synthesis using solution processes. Typically a low temperature anneal (about 100 °C) is involved in film synthesis with subsequent cooling through the cubic-to-tetragonal phase transition near 65 °C. Since the transition temperature is within the range expected in real world device applications, it is therefore important to understand the structural behavior at this transition and its impact on the device performance.

In order to better understand this phase transition in CH3NH3PbI3 thin films, we have developed the capability for operando synchrotron X-ray diffraction by designing a sample stage for simultaneous, temperature dependent measurement of J-V curves and diffraction. This has allowed us to obtain X-ray diffraction data during the operation of CH3NH3PbI3 devices.

 Here I will present detailed structural characterization of the perovskite crystal structure with increasing temperature, including the tetragonal lattice distortion, octahedral rotations associated with the room temperature tetragonal phase, and thermal (disorder) parameters. The impact of these structural changes on the device J-V characteristics will be described and we comment on potential implications for material and device properties.

SPEAKER BIOGRAPHY:

Michael Toney is head of the Materials Sciences Division and a distinguished staff scientist at the Stanford Synchrotron Radiation Lightsource (SSRL), part of the SLAC National Accelerator Laboratory. He is a pioneer in the use of X-ray diffraction and small angle scattering for the determination of molecular and mesoscale structure of organic and polymeric thin films and for the determination of atomic structure of electrode-electrolyte interfaces. Toney received his BS from Caltech in 1979 and his PhD from the University of Washington in 1983, both in physics. He spend one year as a postdoc at the Risoe National Lab (now DTU) in Denmark, where he participated in some of the first surface X-ray diffraction experiments. He then began working at IBM Almaden Research in materials sciences. He left IBM in 2003 to join SLAC National Accelerator Laboratory and Stanford, where he starting programs in sustainable energy materials.

AGENDA:

  • 11:30 am – Registration & light lunch (pizza & drinks)
  • Noon – Presentation & Questions/Answers
  • 1:00 pm – Adjourn
COST: FREE, but a $5 donation is requested to help cover the cost of lunch

Please register here.

Also, visit our Meetup Group.

Bringing Better Pixels to UHD with Quantum Dots

Thursday, November 19th, 2015

 

Tuesday, December 15, 2015 151215 Charlie Hotz Nanosys Noon – 1  pm
Texas Instruments (TI) Auditorium E-1
2900 Semiconductor Drive
Santa Clara, CA
map

This seminar is being cosponsored by the Santa Clara Valley Chapter of the IEEE Vehicular Technology Society.

 

TITLE: Bringing Better Pixels to UHD with Quantum Dots
Adobe_PDF_Icon.svg

SPEAKER: Dr. Charlie Hotz, Vice President of R&D, Nanosys

 

 

ABSTRACT:
Advances in Quantum Dot chemistry and synthesis have made them an ideal emitter for backlight units in LCDs, with over 25 retail SKUs using Quantum Dots now available ranging from 7” tablet size up to 85” TV size. The next wave of technology innovation in displays is upon us now with Ultra-High Definition, whose most well-known benefit is an increase in resolution from HD to 4K, but there is much more to this new broadcast specification. High dynamic range (HDR) and wide color gamut (WCG) bring more perceptible benefits to users in terms of an improved viewing experience than improved resolution alone.
The ultra-high color gamut standard adopted for UHD broadcast, known as Rec. 2020, was originally defined for laser-based projectors where the color primaries are on the color locus of the CIE diagram. Due to the deeply saturated color coordinates, Rec. 2020 is beyond the capabilities of OLEDs and conventional LED backlit LCDs. So is the Rec. 2020 color standard reachable for consumer displays or is it only for high-end laser-based projection systems? This presentation will explore the capability of using quantum dots in LCDs to reach the ultra-high color gamut of Rec. 2020.

SPEAKER BIOGRAPHY:
Dr. Charlie Hotz sets the vision for Nanosys’ design, invention of new products and development of existing products. Dr. Hotz has been with Nanosys for 2 years and has developed the company’s large-scale QD synthesis processes and equipment, including working with all the regulatory bodies such as the EPA and local jurisdictions.

Prior to Nanosys, Dr. Hotz was Vice President, R&D for 6 years at Solexant, a QD based photovoltaics company where he develop the first ever high efficiency QD solar cells.  Dr. Hotz also served as Vice President of R&D for 7 years at Quantum Dot Corporation, where he developed many QD products for diagnostic and biological applications which are still in use today at Thermo-Fischer, who acquired Quantum Dot Corporation.  Charlie has a Ph.D. in Chemistry from Michigan.

AGENDA:

  • 11:30 am – Registration & light lunch (pizza & drinks)
  • Noon – Presentation & Questions/Answers
  • 1:00 pm – Adjourn
COST: FREE

Please RSVP here by Monday December 14 at 5PM.

November 17 Half-Day Fall Symposium: Biomimetic Nanotechnology

Wednesday, October 21st, 2015

Join us for our 11th Annual Half Day Fall Symposium on Biomimetic Nanotechnology

Tuesday Nov 17, 2015
Registration opens: 12:00 PM
Conference: 1:00 PM – 4:30 PM
Texas Instruments (TI) Auditorium E-1
2900 Semiconductor Drive
Santa Clara, CA
map

biomimetic-banner

Everywhere in nature, nanoscale features enable macro-scale phenomena.
• How is it that geckos can cling to smooth vertical surfaces and never lose their grip?
• What makes butterfly wings iridescent?
• How do chameleons change their hue?
• What keeps lily pads dry in a rainstorm?
The answer is specialized nanostructures!
Come on Nov. 17 and learn about fascinating examples of biomimicry on the nanoscale.

The symposium will also provide a forum for networking and the exchange of information among local academics, students, scientists, engineers, early stage venture capitalists and entrepreneurs who share an interest in nanotechnology and its biomimetic applications.

Speakers Panel

Biomimicry-speakers

Nanostructured Interfaces for Therapeutic Delivery–Tejal Desai, UC San Francisco

Lessons from Brain Connectivity for Next Gen 3D NanoICs–Jan Rabaey, UC Berkeley

Nanopore Sequencing of DNA Comes of Age–Hugh Olsen and Miten Jain, UC Santa Cruz

A Chameleon-Inspired Stretchable Electronic Skin–Ho-Hsiu Chou, Stanford University

There will also be a student poster session displaying student research in nanotechnology.

Fees (online registration):
IEEE Members: $25
Non-IEEE Members: $35
Unemployed/Between Jobs: $20
Students (with ID): $15
Save $5 with early registration — by November 10th
Add $10 for Registration at the door

Please register here.
Also, visit our Meetup Group.

Agenda:

12:00 Registration Begins
12:30 Networking and Lunch
1:00 Symposium begins

Emerging Non-volatile Memory, enabled by Carbon Nano-materials

Tuesday, August 18th, 2015

Tuesday, September 15, 2015
Noon – 1  pm
Texas Instruments (TI) Auditorium E-1
2900 Semiconductor Drive
Santa Clara, CA
map

 

TITLE: Emerging Non-volatile Memory, enabled by Carbon Nano-materials
Adobe_PDF_Icon.svg
 
 

SPEAKER: Dr. Ethan C. Ahn, Dept of Electrical Engineering, Stanford Nanoelectronics Lab
 

ABSTRACT:
With the advent of so-called ‘big data’ era and the increasing need for greater storage capacity in various mobile and wearable devices, it is becoming more important to explore a new storage-class memory technology. As illustrated in recent research articles and papers, significant progress on emerging non-volatile memory (NVM) devices such as spin-transfer-torque magnetic random access memory (STT-MRAM), resistive or metal-oxide RAM (RRAM), or phase-change memory (PCM), made it possible to replace the mainstream NVM (NAND Flash) and even reach certain on-chip memory requirements (e.g., L2/L3 SRAM cache). This is important, as the energy efficiency of computing circuits/systems has been increasingly limited by the memory and storage devices. In this talk, a frontier research on the near- and long- term potential of emerging nanoscale memory devices and architectures will be discussed to replace ultimately scaled CMOS memory device technologies. The emerging 1TnR (one-transistor-n-resistors) array architecture with carbon nanotube field-effect transistor as one-dimensional selection device and thus reduced sneak leakage is demonstrated as a cost-effective and 3D-stackable solution. The integrated bipolar RRAM device, for example, exhibits self-compliance characteristics with high endurance and fast switching speed. It is pointed out that the carbon nanotube electrode brings the (lithography-free) critical dimension of the memory device down to a single-digit-nanometer. The novel thermal engineering technique for low-power NVM applications is also introduced using a monolayer graphene as an interfacial thermal barrier. The programming (RESET) current of the graphene-inserted PCM device is reduced by about 40% due to an improved thermal efficiency. The status, key challenges, and promising applications of the RRAM, PCM, and STT-MRAM technologies will be briefly discussed in the talk.

SPEAKER BIOGRAPHY:
Dr. Ahn received the Ph.D. in Electrical Engineering (EE) at Stanford University in 2015, working under the supervision of Professor H.-S. Philip Wong. He joined Stanford University in 2010, after a 3-year research career on Spintronic devices (STT-MRAM) with the Korea Institute of Science and Technology (KIST) in Seoul, Korea. While at KIST, he initiated the collaborative research program with Michigan State University to study spin-dependent transports in magnetic multilayers and spinvalves. He received the B.S. and M.S. degrees in EE from the Korean Advanced Institute of Science and Technology (KAIST) in Daejeon, Korea. He is the author of over 10 peer-reviewed research journal papers in electrical engineering and applied physics, over 20 premier international conference papers, and one book chapter of Emerging Nanoelectronic Devices (ed. A. Chen, John Wiley & Sons, Ltd, Jan. 2015). His primary research interests include emerging non-volatile memory devices and architectures (including Metal-oxide RAM and Phase-Change Memory), beyond CMOS electronics (utilizing Carbon Nano-materials such as Carbon Nanotube and graphene), and various spintronic devices (including STT-MRAM and Spin-FET). Dr. Ahn has been the recipient of numerous awards and honors, including John Bardeen Student Research Award for Excellence in Nanodevice Research (2014), Best Summer Research Intern Award by T.-C. Chen at IBM T. J. Watson (2013), and GE Scholarships (2004).

AGENDA:

  • 11:30 am – Registration & light lunch (pizza & drinks)
  • Noon – Presentation & Questions/Answers
  • 1:00 pm – Adjourn
COST: FREE

 

Please RSVP here to make sure we have enough lunch.