Assistant Professor Zhong Chen

University of Arkansas

Abstract:

The increasing demands for high-density power modules drives the scaling of the power modules in terms of size, weight, power density, and operating temperature. Further size reduction of wide bandgap power modules can be achieved by scale-down of gate driver circuitry through replacing gate transformers with integrated high temperature optocouplers. This will lead to 3D ultra high density integrated power modules and achieve disruptive performance in terms of thermal management, power density, power efficiency, reliability and operating environments. The presentation focuses on the development of a reliable high-temperature optocoupler to replace gate transformers as a galvanic isolation system. The designed optical coupler can operate at 250°C and above with at least ten-year projected lifetime, which has over 500 times volume reduction from gate transformer.

Bio:

Dr. Zhong Chen is currently an Assistant Professor in Electrical Engineering at University of Arkansas. He received his PhD in Electrical and Computer Engineering from North Carolina State University. Dr. Chen worked for seven years as ESD specialist in Analog Technology Development at Texas Instruments (TI). At TI, he has been providing ESD solutions for various analog and digital applications in automotive, power management, power interface, high-speed product, audio and imaging products and motor drives. He is currently a technical committee member for the ESD/Latchup Chapter of the International Reliability Physics Symposium and the Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium. In his research, Chen focuses on novel device for harsh environment, integrated circuit (IC) and system level ESD and reliability; power electronics and power devices; wide-bandgap material, devices and packaging.