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High Mobility Enhancement Mode 4H-SiC MOSFETS Using a Thin SiO2 / Al2O3 Gate Stack

2019-05-03 @ 15:00 - 16:00

Speaker: Prof. Anthony O’Neill, Newcaslte University, UK

Abstract High performance 4H-SiC MOSFETs have been fabricated, having a peak effective mobility of 265 cm2/V.s, and a peak field effect mobility of 154 cm2/V.s, in 2 µm gate length MOSFETs.  The gate stack was designed to minimise interface states and comprised a 0.7 nm thermally grown SiO2 on 4H-SiC, followed by Al2O3 and a metal gate contact. In this way carbon remaining following SiC oxidation is significantly reduced. A density of interface traps in the range 6×1011 – 5×1010cm-2eV-1 is also obtained. Temperature dependent electrical data reveals that the high mobility results from conduction being phonon-limited rather than Coulomb-limited. Furthermore, universal mobility in these 4H-SiC MOSFETs is shown to be up to 50% of that observed in Si devices. Expressions for electric field dependent contributions to mobility are obtained.  A steep sub-threshold slope of 127 mV/dec indicates low electrical defect density. A temperature coefficient of -4.6 mV/K in threshold voltage is similar to that in Si MOSFETs.

Details

Date:
2019-05-03
Time:
15:00 - 16:00

Venue

KTH EECS Sal B Peter Weissglas
Kistagången 16
Kista, Kista 16440 Sweden
View Venue Website

Organizers

IEEE ED Chapter
IEEE PE/PEL Chapter