Location: Faculty Lounge, Elevator C, floor 2, Electrum, Kista

Title: On the reliability assessment of SiC-MOSFETs

Presenter: Muhammad Nawaz

Affiliation: ABB Corporate Research, Västerås, Sweden

Abstract

High power Semiconductor devices (e.g., MOSFETs, IGBTs and IGCTs) provide basic building blocks for variety of high power applications such as traction, renewable energy generation system, motor drives, and welding appliances besides energy transmission and distribution networks. While high power wide bandgap SiC devices are still going through early phase of their technological development, low power SiC modules in the voltage range 1.2 – 1.7 kV (100 – 800 A) are now visible in the commercial market. This talk will address the reliability assessment of SiC based high power modules in the voltage range from 1.2 – 1.7 kV. Static and dynamic results will also be presented for 3.3 and 10.0 kV SiC power modules suitable for energy transmission and distribution networks.

Bio

Muhammad Nawaz (Ph.D in 1996 from Oslo University Norway) is a Principle Scientist at ABB corporate research, Västerås, Sweden where he is actively engaged in research activities in power electronics field with special focus on silicon and silicon carbide (SiC) based power semiconductor devices. Previously, he has worked at several places such as Chalmers University of Technology (CTH), Sweden, Ericsson Microelectronics (Kista) Sweden, Infineon Technology AG, and TranSiC (now Fairchild Semiconductor) Sweden. He is a senior member of IEEE and associate editor of IEEE Transactions on Power Electronics. He is author/coauthor of over 100 papers in peer reviewed international journals and conferences besides holding several industrial patents.