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SiC device manufacturing using ion implantation: Opportunities and challenges
May 23 @ 15:00 - 16:00
Dr. Tobias Erlbacher
Fraunhofer Institute of Integrated Systems and Device Technology IISB, Erlangen, Germany
Manufacturing of vertical power transistors utilizes doping by ion implantation. However, in contrast to silicon, SiC manufacturing technology is still maturing. This presentation will highlight the challenges of doping SiC by ion implantation: Besides activation at higher temperatures than in silicon, channeling of ions occurs to a higher degree in SiC. Moreover, fabrication of implanted regions with aluminum is hampered by defects which constitute compensation sites in 4H-SiC. In an attempt to understand these effects, TCAD modelling has been implemented to help predict the outcome of a selected manufacturing technology. Results of device modelling and comparison to electrical measurements are presented, and the present state-of-the-art for advanced device manufacturing using charge-compensation patterns is discussed.
Tobias Erlbacher received the Diploma in Electrical Engineering (Microelectronics) from the University of Erlangen-Nuremberg in 2004, and his Ph.D. degree in 2008. Since 2009 he is with the Fraunhofer Institute of Integrated Systems and Device Technology IISB in Erlangen, where he is heading the “Devices” Group. His research activities focus on device modelling, design and integration as well as technology development for power electronics. This includes the monolithic integration of passive networks and the optimization of power semiconductor devices in silicon integrated circuits. He has authored a book on lateral power transistors in integrated circuits. Moreover, Dr. Erlbacher is working on design and development of silicon carbide devices for power applications, high-temperature integrated circuits and sensors. He also has expertise with non-volatile memories and device characterization at the nano-scale. He has authored and coauthored over 70 papers in scientific journals and contributed to 7 patents.