-
High Mobility Enhancement Mode 4H-SiC MOSFETS Using a Thin SiO2 / Al2O3 Gate Stack
High Mobility Enhancement Mode 4H-SiC MOSFETS Using a Thin SiO2 / Al2O3 Gate Stack
Speaker: Prof. Anthony O'Neill, Newcaslte University, UK Abstract— High performance 4H-SiC MOSFETs have been fabricated, having a peak effective mobility of 265 cm2/V.s, and a peak field effect mobility of 154 cm2/V.s, in 2 µm gate length MOSFETs. The gate stack was designed to minimise interface states and comprised a 0.7 nm thermally grown SiO2 on 4H-SiC,... Read more