IEEE Transactions on Nanotechnology



The IEEE Transactions on Nanotechnology (TNANO) publishes novel and important results in engineering at the nanoscale.  

Article in focus: December 2016

From the November 2016 issue of IEEE Transactions on Nanotechnology

Comparative Study of Field Effect Transistor Based Biosensors

by Dong-Il Moon ; Jin-Woo Han ; M. Meyyappan
T-NANO, Vol. 15, Issue 6, pp. 956 – 961, November 2016.

The operational principle of the FET-based sensor. (a) Conventional
bio-FET. (b) Nanogap-FET. Chemical and biological reactions can change the
current-voltage characteristics of a device. Additional biasing effect, i.e., gating
effect, can be applied to the device due to the sensing material. Accordingly,
the potential barrier between the source (S) and drain (D) is modulated, and a
threshold voltage (VT ) with the on-state current (ION ) and subthreshold swing
(SS) is changed. Thus, a FET-based device, whose characteristics are affected
by the sensing materials such as biomolecular and chemical species, can be
utilized for sensor applications.

Abstract: A comparative study of biosensors based on a field effect transistor (FET) configuration is conducted using numerical analysis. A conventional back-gated device and three different nanogap-based structures are evaluated in terms of their performance metrics including response, sensitivity, detection limit, and dynamic range. An electrostatic model is used to address the sensing principle. The biochemical reaction is emulated simply by a change in the negative charge density and permittivity. The back-gated silicon nanoribbon FET (SiNR-FET) is used as a reference for comparison. The SiNR-FET is not affected by the permittivity change due to the biochemical reaction, whereas other nanogap-based structures are influenced by both the charge density and the permittivity shifts. Among the nanogap-based structures, a dielectric modulated FET (DM-FET) exhibits the widest dynamic range and a strong permittivity dependency. An underlap gate FET (UG-FET) and a fingered gate FET (FG-FET) show the highest sensitivity and detection limit. But the dynamic ranges of the UG-FET and FG-FET are narrower than that of the DM-FET. Nevertheless, by the nature of independent controllability of two gates, the FG-FET allows a tunable dynamic range. This comparative study offers application-specific guidelines for making appropriate choices for the sensor structure.


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Message from the Editor-In-Chief

by Fabrizio Lombardi


On December 31 2015, I completed the first year of my term as Editor-In-Chief (EIC); as you will read further in this editorial, I am pleased to report that the IEEE Transactions on Nanotechnology (TNANO) continues to strengthen its reputation and consolidate its role as the flagship Transactions of the IEEE Nanotechnology Council (NTC). 2015 has been an outstanding year for TNANO; Manuscript Central Scholar 1 reports the following very impressive statistics for the 2015 calendar year:

Number of submitted original papers: 647
Number of revised-and-resubmitted papers: 99
Total number of papers received: 746
Acceptance rate: 30.4%
Rejection rate: 51.6%
Revise-and-resubmit rate: 18%

All the above numbers are the absolute best in quantitative and qualitative terms (such as for the highest selectivity) in the 14 years of existence of TNANO and reflect the steady and continued growth in terms of quality and quantity of this periodical. (continue to read)

Information about TNANO

TNANO focuses on nanoscale devices, systems, materials and applications, and on their underlying science. It is an interdisciplinary journal that covers all areas of nanotechnology. The hardcopy version is published bi-monthly, but accepted papers are published on the web as soon as they are submitted in final form. TNANO is a publication of the IEEE Nanotechnology Council.

TNANO is a Hybrid Journal, which means that it allows either:

  • Traditional manuscript submission
  • Open Access (author-pays OA) manuscript submission at a discounted rate

 TNANO publishes Research Letters, Regular Papers, and Correspondence Items. Research Letters must not exceed three printed pages. They are subject to the same thorough review process as Regular Papers, but receive priority treatment. A Research Letter that is accepted without major revisions is expected to be published on the web within 4 to 6 weeks of its initial submission.

Areas covered by TNANO include, but are not limited to:

  • Nano and Molecular Electronics
  • Circuits and Architectures
  • Nanomagnetism and Spintronics
  • Nano-Optics, Nano-Optoelectronics and Nanophotonics
  • Nanorobotics and Nanoassembly
  • Nanosensors and Nanoactuators
  • Nanomechanics and Nanoelectromechanical Systems
  • Nanobiotechnology and Nanomedicine
  • Nanofabrication and Nanolithography
  • Nanometrology and Characterization
  • Computational Nanotechnology

Additional information on these is found here.