The IEEE Transactions on Nanotechnology (TNANO) publishes novel and important results in engineering at the nanoscale.
Article in focus: May 2016
From the May 2016 issue of IEEE Transactions on Nanotechnology
Printable Parallel Arrays of Si Nanowire Schottky-Barrier-FETs With Tunable Polarity for Complementary Logic
by Sebastian Pregl; André Heinzig; Larysa Baraban; Gianaurelio Cuniberti; Thomas Mikolajick; Walter M. Weber T-NANO, Vol. 15, Issue 3, pp. 549 – 556, May 2016.
Abstract: In this paper, we present a novel technology of printable bottom-up grown Si nanowire parallel arrays for low-dissipation power electronics. Parallel aligned layers of monocrystalline Si nanowires can be deposited on arbitrary substrates over large areas by the printing process. The presented transistors consist of parallel arrays of longitudinal NiSi2-Si-NiSi2 nanowire heterostructures, which naturally show ambipolar transistor behavior when a single gate is employed. By a double gate architecture, a reconfigurable transitor component is created, for which unipolar p- or n-type characteristics can be obtained depending on the polarity of the second gate. Transfer and output characteristics of these transistors on a Si/SiO2 substrate with back gate, top gate, and reconfigurable double gate architecture are presented here in detail. Very high on/off-current ratios of over 108 are achieved with very low off-currents. Due to the high number of nanowires incorporated into individual parallel arrays, output currents of 0.5 mA and a high yield of functional transistors of close to 100% at nanowire coated areas are demonstrated.
Message from the Editor-In-Chief
by Fabrizio Lombardi
On December 31 2015, I completed the first year of my term as Editor-In-Chief (EIC); as you will read further in this editorial, I am pleased to report that the IEEE Transactions on Nanotechnology (TNANO) continues to strengthen its reputation and consolidate its role as the flagship Transactions of the IEEE Nanotechnology Council (NTC). 2015 has been an outstanding year for TNANO; Manuscript Central Scholar 1 reports the following very impressive statistics for the 2015 calendar year:
Number of submitted original papers: 647
Number of revised-and-resubmitted papers: 99
Total number of papers received: 746
Acceptance rate: 30.4%
Rejection rate: 51.6%
Revise-and-resubmit rate: 18%
All the above numbers are the absolute best in quantitative and qualitative terms (such as for the highest selectivity) in the 14 years of existence of TNANO and reflect the steady and continued growth in terms of quality and quantity of this periodical. (continue to read)
Information about TNANO
TNANO focuses on nanoscale devices, systems, materials and applications, and on their underlying science. It is an interdisciplinary journal that covers all areas of nanotechnology. The hardcopy version is published bi-monthly, but accepted papers are published on the web as soon as they are submitted in final form. TNANO is a publication of the IEEE Nanotechnology Council.
TNANO is a Hybrid Journal, which means that it allows either:
- Traditional manuscript submission
- Open Access (author-pays OA) manuscript submission at a discounted rate
TNANO publishes Research Letters, Regular Papers, and Correspondence Items. Research Letters must not exceed three printed pages. They are subject to the same thorough review process as Regular Papers, but receive priority treatment. A Research Letter that is accepted without major revisions is expected to be published on the web within 4 to 6 weeks of its initial submission.
Areas covered by TNANO include, but are not limited to:
- Nano and Molecular Electronics
- Circuits and Architectures
- Nanomagnetism and Spintronics
- Nano-Optics, Nano-Optoelectronics and Nanophotonics
- Nanorobotics and Nanoassembly
- Nanosensors and Nanoactuators
- Nanomechanics and Nanoelectromechanical Systems
- Nanobiotechnology and Nanomedicine
- Nanofabrication and Nanolithography
- Nanometrology and Characterization
- Computational Nanotechnology
Additional information on these is found here.