IEEE Transactions on Nanotechnology
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Archive for April, 2017

TNANO Article in focus: March-April 2017

Wednesday, April 12th, 2017

From the January 2017 issue of IEEE Transactions on Nanotechnology

Negative Capacitance for Boosting Tunnel FET performance

by Masaharu Kobayashi ; Kyungmin Jang ; Nozomu Ueyama ; Toshiro Hiramoto
T-NANO, Vol. 16, Issue 2, pp. 253 – 258, January 2017.

 

Abstract: We have proposed and investigated a super steep subthreshold slope transistor by introducing negative capacitance of a ferroelectric HfO2 gate insulator to a vertical tunnel FET for energy efficient computing. The channel structure and gate insulator are systematically designed to maximize the Ion/Ioff ratio. The simulation study reveals that the electric field at the tunnel junction can be effectively enhanced by potential amplification due to the negative capacitance. The enhanced electric field increases the band-to-band tunneling rate and Ion/Ioff ratio, which results in 10x higher energy efficiency than in tunnel FET.
 


Special Issue on Memristive Materials, Devices and Systems

Tuesday, April 4th, 2017

Special Section/Issue on the First International Conference on Memristive Materials, Devices & Systems

IEEE Transaction on Nanotechnology (TNANO) seeks original research manuscripts for a Special Section/Issue on the First International Conference on Memristive Materials, Devices & Systems

Background and Scope

 

Extensive research on Memristor technologies, materials and devices has unveiled many interesting and promising applications in (nano)-electronics, bio and neuro-engineering, signal processing, sensors and beyond. Encouraged by the success of the First (1 st ) International Conference on Memristive Materials, Devices & Systems (MEMRISYS), IEEE Transactions on Nanotechnology (TNANO) will consider extended versions of papers presented at MEMRISYS 2017. Submitted manuscripts will undergo a full peer review process. Authors are kindly requested to expand significantly the conference version to contain substantial new technical materials due to the restriction in duplicated publications and the competitive acceptance process.
Manuscripts for TNANO must be submitted on-line using the IEEE TNANO manuscript template and via the IEEE Manuscript Central found at https://mc.manuscriptcentral.com/tnano. On submission to TNANO, authors should select the “Special Issue” manuscript type instead of “Regular Paper.” The authors should consider that manuscripts must focus on nanotechnology as reflected by technical contents and references.

Important Dates

  • Manuscript Submission: July 31, 2017
  • First decision to authors: September 30, 2017
  • Revision due (if necessary): October 30, 2017
  • Final notification (acceptance/rejection): November 30, 2017
  • Final manuscripts due: December 31, 2017
  • Special section publication: Early 2018

Guest Editors

 

Please address all other correspondence regarding this Special Issue to the Guest Editors:

Pierre-Emmanuel Gaillardon (University of Utah, USA) pierre-emmanuel.gaillardon@utah.edu

Christo Papavassiliou (Imperial College London, UK) c.papavas@imperial.ac.uk

Themis Prodromakis (University of Southampton, UK)/ T.Prodromakis@soton.ac.uk

Georgios Ch. Sirakoulis (Democritus University of Thrace, Greece) gsirak@ee.duth.gr

Qiangfei Xia (University of Massachusetts, USA) qxia@ecs.umass.edu

The guest editors can be contacted at memrisys2017@gmail.com
The Call for Papers is available here